Jason Wang, Marjorie Balazs, Brian Tansy, Piero Pianetta, Katharina Baur and Sean Brennan
Proceedings of SEMICON® West 2002
With the increasing popularity of copper metallization for ultralarge scale integrated circuits (ULSI), copper (Cu) contamination on the silicon wafer has become a greater concern. Total Reflection X-ray Fluorescence (TXRF) and Vapor Phase Decomposition Inductively Coupled Plasma Mass Spectrometry (VPD-ICP-MS) have been widely used for measuring surface metal contamination. However, there are some issues on the quantification of Cu on the wafer surface. Read more