Fuhe Li, Marjorie K. Balazs and Raymond Pong
Royal Society of Chemistry
2000
Laser ablation coupled with a quadrupole based ICP-MS (LA-ICP-MS) has been used for quantitative analysis of the total dopant dose implanted in crystalline silicon wafers. Four commonly used dopant ions in the semiconductor industry, namely ¹¹B⁺, ⁷⁵As⁺, ¹²¹Sb⁺ and ³¹P⁺, were studied in this work. The penetration depths and vertical profiles of these implanted ions in silicon were simulated using `stopping and range of ions in matter' (SRIM) and utilized to help select the laser sampling parameters. Read more