Fuhe Li, Wendy Rivello and Justin Laiduc
Analytical Insight
Summer 2010
As an advanced ceramic material, silicon carbide (SiC) has become a promising and attractive substrate to the semiconductor industry for making high-performance electronic devices. Because of its high electric and mechanical strength, thermal and chemical stability, and radiation resistance, SiC based devices are capable of operating under extreme conditions at high temperature, under radiation conditions, or in chemically active media. Read more