Sample Types
- Production wafer - 450 mm or smaller
- Bare
- Oxide
- BPSG
- SiN
- GaAs
- Other
- Ion implantation
- Thermal annealing furnace
Analyses Provided
- Trace metals
- Dopants
- Organics
- Ionic haze
- Particle deposition
- Defect density
- Surface roughness
- Evaluation of Ra for thin film materials prior to and after processing (includes chemical and physical etching)
- Grain size and shape
Applications
- Surface profiles of thin film and thick coatings
- Metrology of semiconductor devices, LED’s and PV thin films
- Surface finish of glass and metal substrates
- Materials evaluation
- Quality control
Techniques
- Vapor phase decomposition inductively coupled plasma mass spectroscopy (VPD ICP-MS)
- Total reflection X-ray fluorescence (TXRF)
- Drop scan etch (DSE) ICP-MS
- Thermal desorption gas chromatography (TD GC-MS)
- Atomic force microscope (AFM)
- Particle deposition
- Etch pit density determination
Application Notes
- APP0313 SARIS Material Analysis
- APP0356 Particle Counts in UPW
- APP0357 Organic Outgas Analysis
- APP0368 Witness Wafers Contamination Analysis
- APP0450 Advanced Elemental Depth Profiling
- APP0455 GD-OES for Element Survey Depth Profiling
- APP0466 Contamination Identification
- APP0467 Wafer Surface Testing